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A Dynamic-Biased Resistor-Based CMOS Temperature Sensor with a Duty-Cycle-Modulated Output


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Abstract


This brief presents a resistor-based CMOS temperature sensor with a duty-cycle-modulated output. A dynamicbiased resistive analog front-end (AFE) is proposed to generate voltages with positive and negative temperature dependencies. The voltages are then converted into a digital-friendly duty-cyclemodulated output, which can be proceeded by digital systems directly. Fabricated in a standard 0.13-m CMOS process, this sensor occupies a silicon area of 0.025 mm2 and can operate with a supply voltage as low as 0.8 V. It has a measured inaccuracy of 0.85 C (3) from -40 C to 85 C after a two-point calibration. Measured at room temperature, it shows a resolution of 0.226 C in a 0.25-ms conversion time while dissipating 12.5 W.

KeyWords
CMOS temperature sensor, resistor-based, dutycycle, dynamic, area-efficient



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